Lithographic method to apply a pattern to a substrate and lithographic apparatus

ABSTRACT

A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

This application incorporates by reference in their entireties U.S.patent application Ser. No. 14/301,572, U.S. patent application Ser. No.13/874,917, U.S. patent application Ser. No. 12/390,552 and U.S.provisional application 61/064,281.

BACKGROUND

Field of Invention

The present invention relates to a lithographic apparatus and method.

Related Art

A lithographic apparatus is a machine that applies a desired patternonto a target portion of a substrate. Lithographic apparatus can beused, for example, in the manufacture of integrated circuits (ICs). Inthat circumstance, a patterning device, which is alternatively referredto as a mask or a reticle, may be used to generate a circuit patterncorresponding to an individual layer of the IC, and this pattern can beimaged onto a target portion (e.g. comprising part of, one or severaldies) on a substrate (e.g. a silicon wafer) that has a layer ofradiation-sensitive material (resist). In general, a single substratewill contain a network of adjacent target portions that are successivelyexposed. Known lithographic apparatus include so-called steppers, inwhich each target portion is irradiated by exposing an entire patternonto the target portion in one go, and so-called scanners, in which eachtarget portion is irradiated by scanning the pattern through the beam ina given direction (the “scanning”-direction) while synchronouslyscanning the substrate parallel or anti-parallel to this direction.

When a radiation beam is incident upon the patterning device, thepatterning device is heated by the radiation beam. For example, heatingmay occur due to absorption of some of the energy of the radiation beaminto the patterning device. Heating of the patterning device can lead toexpansion of the patterning device. If the expansion of the patterningdevice is not taken into account, a pattern may be incorrectly appliedto the substrate. For instance, overlaid patterns applied to thesubstrate may not totally overlap with one another, such that there isan overlay error between successively applied patterns. This may occurdue to the patterning device having a different temperature (andtherefore having a different degree of expansion) for each successiveexposure. In known arrangements, the expansion of the patterning devicemay be taken into account by providing the patterning device withalignment marks. For instance, the alignment marks may be located in oraround an area of the patterning device which defines an image field. Bydetecting changes in the positions of the alignment marks, the degree ofexpansion of the patterning device, and in particular the image field,can be determined. Elements of the lithographic apparatus, for examplelenses of a projection system of the lithographic apparatus, can beadjusted to compensate for the expansion of the patterning device,thereby ensuring that patterns are correctly applied to the substrate.

In known arrangements, lenses of the projection system are adjusted(e.g. moved) before each exposure. The lenses may be adjusted to takeinto account a uniform expansion of the patterning device, theadjustment being arranged to provide a correction (i.e., a change) of amagnification factor (or de-magnification factor) of the projectionsystem required to reduce the size of pattern features applied to thesubstrate to a desired size. During application of the pattern to thesubstrate (using a static or scanned exposure), the lens elements arenot adjusted.

In some known arrangements, the expansion of the patterning device isassumed to be uniform due to it being heated by the radiation beam. Inarrangements where the expansion is assumed to be non-uniform, themagnification correction obtained by adjustment of the lenses of, forexample, the projection system is uniform (in a plane of the imagefield) and remains unchanged during an exposure. This means that theadjustment of the lenses of the projection system may not accuratelyreflect an actual and non-uniform expansion of the patterning devicewithin, for example, an exposure field. This may lead to for example,overlay errors in patterns successively applied to the substrate.

SUMMARY

It is desirable to provide, for example, a lithographic apparatus andmethod which obviates or mitigates one or more of the problems of theprior art, whether identified herein or elsewhere.

According to an embodiment of the present invention, there is provided amethod for applying a pattern to a substrate comprising illuminating aslit shaped area, elongated along a first direction, of a patterningdevice with a radiation beam to provide a patterned radiation beam,scanning the patterning device through the radiation beam in a scandirection perpendicular to the first direction, imaging the patternedradiation beam onto a target portion of the substrate using a projectionsystem, a characteristic of the projection system being an imagemagnification component along the first direction, and synchronouslyscanning the substrate along the scan direction, the method including:applying an adjustment to the image magnification component as thesubstrate is scanned across a footprint of the radiation beamcorresponding to the slit shaped area, a magnitude of the adjustmentbeing a function of a position of the footprint relative to a center ofthe target portion.

A further characteristic of the projection system may be an imagedistortion component along the scan direction, and the method may thencomprise applying a supplementary adjustment to the image distortioncomponent as the substrate is scanned across the footprint of theradiation beam, a magnitude of the supplementary adjustment being afunction of a position of the footprint relative to a center of thetarget portion.

The magnitude of the adjustment to the image magnification componentand/or the magnitude of the supplementary adjustment may be arranged toreduce a distortion of an image field due to heating of the patterningdevice.

According to an embodiment of the invention, there is provided alithographic apparatus comprising an illumination system configured toilluminate a slit shaped area, elongated along a first direction, of apatterning device with a radiation beam to provide a patterned radiationbeam, a support structure configured to hold the patterning device andmove the patterning device along a scan direction, a substrate tableconfigured to hold a substrate and move the substrate synchronously withthe support structure along the scan direction, a projection systemconfigured to project the patterned radiation beam onto a target portionof the substrate, a characteristic of the projection system being animage magnification component along the first direction, and acontroller configured to apply an adjustment to the image magnificationcomponent as the substrate is scanned across a footprint of theradiation beam corresponding to the slit shaped area, a magnitude of theadjustment being a function of a position of the footprint relative to acenter of the target portion.

A further characteristic of the projection system may be an imagedistortion component along the scan direction, and the controller may beconfigured to apply a supplementary adjustment to the image distortioncomponent as the substrate is scanned across the footprint of theradiation beam, a magnitude of the supplementary adjustment being afunction of a position of the footprint relative to a center of thetarget portion.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will be described, by way of example only,with reference to the accompanying schematic drawings in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 schematically depicts a lithographic apparatus according to anembodiment of the invention;

FIG. 2 schematically depicts assumed uniform expansion of differentparts of a patterning device;

FIGS. 3a and 3b schematically depict overlay errors caused by theexpansion of a patterning device for two different field sizes;

FIGS. 4a and 4b schematically depict decomposition of the expansion ofdifferent areas of the substrate into first and second orthogonalcomponents, respectively;

FIG. 5 schematically depicts a part of a projection system;

FIGS. 6a and 6b schematically depict overlay errors after a methodaccording to an embodiment of the present invention has beenimplemented; and

FIGS. 7a to 7c schematically depict various different examples ofpatterns with which a patterning device may be provided.

DETAILED DESCRIPTION

Although specific reference may be made in this text to the use oflithographic apparatus in the manufacture of ICs, it should beunderstood that the lithographic apparatus described herein may haveother applications, such as the manufacture of integrated opticalsystems, guidance and detection patterns for magnetic domain memories,liquid-crystal displays (LCDs), thin-film magnetic heads, etc. Theskilled artisan will appreciate that, in the context of such alternativeapplications, any use of the terms “wafer” or “die” herein may beconsidered as synonymous with the more general terms “substrate” or“target portion”, respectively. The substrate referred to herein may beprocessed, before or after exposure, in for example a track (a tool thattypically applies a layer of resist to a substrate and develops theexposed resist) or a metrology or inspection tool. Where applicable, thedisclosure herein may be applied to such and other substrate processingtools. Further, the substrate may be processed more than once, forexample in order to create a multi-layer IC, so that the term substrateused herein may also refer to a substrate that already contains multipleprocessed layers.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of 365, 248, 193, 157 or 126 nm) and extremeultra-violet (EUV) radiation (e.g. having a wavelength in the range of5-20 nm), as well as particle beams, such as ion beams or electronbeams.

The term “patterning device” used herein should be broadly interpretedas referring to a device that can be used to impart a radiation beamwith a pattern in its cross-section such as to create a pattern in atarget portion of the substrate. It should be noted that the patternimparted to the radiation beam may not exactly correspond to the desiredpattern in the target portion of the substrate. Generally, the patternimparted to the radiation beam will correspond to a particularfunctional layer in a device being created in the target portion, suchas an integrated circuit.

A patterning device may be transmissive or reflective. Examples ofpatterning device include masks, programmable mirror arrays, andprogrammable LCD panels. Masks are well known in lithography, andinclude mask types such as binary, alternating phase-shift, andattenuated phase-shift, as well as various hybrid mask types. An exampleof a programmable mirror array employs a matrix arrangement of smallmirrors, each of which can be individually tilted so as to reflect anincoming radiation beam in different directions; in this manner, thereflected beam is patterned.

The term “projection system” used herein should be broadly interpretedas encompassing various types of projection system, including refractiveoptical systems, reflective optical systems, and catadioptric opticalsystems, as appropriate for example for the exposure radiation beingused, or for other factors such as the use of an immersion fluid or theuse of a vacuum. Any use of the term “projection lens” herein may beconsidered as synonymous with the more general term “projection system”.

The illumination system may also encompass various types of opticalcomponents, including refractive, reflective, and catadioptric opticalcomponents for directing, shaping, or controlling the beam of radiation,and such components may also be referred to below, collectively orsingularly, as a “lens”.

The lithographic apparatus may be of a type having two (dual stage) ormore substrate tables (and/or two or more patterning device tables). Insuch “multiple stage” machines the additional tables may be used inparallel, or preparatory steps may be carried out on one or more tableswhile one or more other tables are being used for exposure.

The lithographic apparatus may also be of a type wherein the substrateis immersed in a liquid having a relatively high refractive index, e.g.water, so as to fill a space between the final element of the projectionsystem and the substrate. Immersion techniques are well known in the artfor increasing the numerical aperture of projection systems.

FIG. 1 schematically depicts a lithographic apparatus according to aparticular embodiment of the invention. The apparatus comprises:

-   -   an illumination system (illuminator) IL to condition a beam PB        of radiation (e.g. UV, DUV or EUV radiation);    -   a support structure (e.g. a mask table) MT to support a        patterning device (e.g. a mask) MA and connected to first        positioning device PM to accurately position the patterning        device with respect to item PL;    -   a substrate table (e.g. a wafer table) WT for holding a        substrate (e.g. a resist-coated wafer) W and connected to second        positioning device PW for accurately positioning the substrate        with respect to item PL;    -   a projection system (e.g. a refractive projection lens) PL        configured to image a pattern imparted to the radiation beam PB        by patterning device MA onto a target portion C (e.g. comprising        one or more dies) of the substrate W; and    -   a controller CR arranged to control the configuration of the        projection system PL (e.g. the position or orientation of one or        more elements of the projection system PL).

As here depicted, the apparatus is of a transmissive type (e.g.employing a transmissive mask). Alternatively, the apparatus may be of areflective type (e.g. employing a programmable mirror array of a type asreferred to above).

The support structure MT holds the patterning device. It holds thepatterning device in a way depending on the orientation of thepatterning device, the design of the lithographic apparatus, and otherconditions, such as for example whether or not the patterning device isheld in a vacuum environment. The support structure MT can usemechanical clamping, vacuum, or other clamping techniques, for exampleelectrostatic clamping under vacuum conditions. The support structure MTmay be a frame or a table, for example, which may be fixed or movable asrequired and which may ensure that the patterning device is at a desiredposition, for example with respect to the projection system. Any use ofthe terms “reticle” or “mask” herein may be considered synonymous withthe more general term “patterning device”.

The illuminator IL receives a beam of radiation from a radiation sourceSO. The source and the lithographic apparatus may be separate entities,for example when the source is an excimer laser. In such cases, thesource is not considered to form part of the lithographic apparatus andthe radiation beam is passed from the source SO to the illuminator ILwith the aid of a beam delivery system BD comprising for examplesuitable directing mirrors and/or a beam expander. In other cases thesource may be integral part of the apparatus, for example when thesource is a mercury lamp. The source SO and the illuminator IL, togetherwith the beam delivery system BD if required, may be referred to as aradiation system.

The illuminator IL may comprise an adjuster AM configured to adjust theangular intensity distribution of the beam. Generally, at least theouter and/or inner radial extent (commonly referred to as σ-outer andσ-inner, respectively) of the intensity distribution in a pupil plane ofthe illuminator can be adjusted. In addition, the illuminator ILgenerally comprises various other components, such as an integrator INand a condenser CO. The illuminator provides a conditioned beam ofradiation PB, having a desired uniformity and intensity distribution inits cross-section.

The radiation beam PB is incident on the patterning device (e.g. mask)MA, which is held on the support structure MT. Having traversed thepatterning device MA, the beam PB passes through the projection systemPL, which focuses the beam onto a target portion C of the substrate W.With the aid of the second positioning device PW and position sensor IF(e.g. an interferometric device), the substrate table WT can be movedaccurately, e.g. so as to position different target portions C in thepath of the beam PB. Similarly, the first positioning device PM andanother position sensor (which is not explicitly depicted in FIG. 1) canbe used to accurately position the patterning device MA with respect tothe path of the beam PB, e.g. after mechanical retrieval from a masklibrary, or during a scan. In general, movement of the object tables MTand WT will be realized with the aid of a long-stroke module (coarsepositioning) and a short-stroke module (fine positioning), which formpart of the positioning device PM and PW. However, in the case of astepper (as opposed to a scanner) the support structure MT may beconnected to a short stroke actuator only, or may be fixed. Patterningdevice MA and substrate W may be aligned using patterning devicealignment marks M1, M2 and substrate alignment marks P1, P2.

The depicted apparatus can be used in the following preferred modes:

1. In step mode, the support structure MT and the substrate table WT arekept essentially stationary, while an entire pattern imparted to thebeam PB is projected onto a target portion C in one go (i.e. a singlestatic exposure). The substrate table WT is then shifted in the X and/orY direction so that a different target portion C can be exposed. In stepmode, the maximum size of the exposure field limits the size of thetarget portion C imaged in a single static exposure.

2. In scan mode, the support structure MT and the substrate table WT arescanned synchronously while a pattern imparted to the beam PB isprojected onto a target portion C (i.e. a single dynamic exposure). Thevelocity and direction of the substrate table WT relative to the supportstructure MT is determined by the (de-)magnification and image reversalcharacteristics of the projection system PL. In scan mode, the maximumsize of the exposure field limits the width (in the non-scanningdirection) of the target portion in a single dynamic exposure, whereasthe length of the scanning motion determines the height (in the scanningdirection) of the target portion.

Combinations and/or variations on the above described modes of use mayalso be employed.

As mentioned above, irradiation of the patterning device MA may alsohave the effect of heating the patterning device MA. Heating thepatterning device MA may cause the patterning device MA to expand. Ifexpansion of the patterning device MA is not taken into account (or ifit is not compensated for), patterns successively applied to a substrateW (e.g. overlaid patterns applied to a target portion of the substrate)may not be positioned accurately relative to one another. There may bewhat is known in the art as an overlay error between the overlaidpatterns. It is known to compensate for a uniform expansion of thepatterning device MA in x and y direction prior to each exposure byadjusting elements of the projection system PL (e.g. the position ororientation of lenses within the projection system) to affect theoverall magnification of the projection system PL, thereby compensatingfor the uniform expansion of the patterning device MA. FIG. 2illustrates an assumption upon which such arrangements and methods forcompensating for the expansion of the patterning device MA is based.

FIG. 2 depicts a patterning device 10. In this Figure, the patterningdevice 10 is a transmissive mask, but the assumption described below isapplicable to, for example, any sort of transmissive, reflective, orrefractive patterning device. Two areas including area 12 and area 14 ofthe patterning device 10 are identified. In known methods and apparatusin which the magnification of the projection system is changed tocompensate for uniform expansion of the patterning device 10, it isassumed that area 12 and area 14 of the patterning device 10 undergouniform and common expansion, as indicated by arrows 16. In accordancewith this assumption the patterning device 10 (heated by the radiationbeam) expands uniformly in all directions. However, the assumption isnot correct. The expansion of different areas of a patterning device isnot in fact always a uniform and common expansion.

FIGS. 3a and 3b depict overlay errors associated with a pattern appliedto a substrate using two fields including field 18 (FIG. 3a ) and field20 (FIG. 3b ), respectively, having different field sizes. A field suchas field 18 may be referred to hereinafter as an image field.

Field 20 may, hereinafter, also be referred to as an image field, or anexposure field. A field is a portion of the substrate onto which theradiation beam has been projected after it has completed, for example,one scan or static exposure of the pattern on the patterning device,such that the pattern is applied to the substrate. As mentioned above,the target portion may be or may comprise an exposure field. For thepresent text and claims the concepts field and target portion areequivalent.

The magnitude and direction of the overlay errors are indicated byarrows 22. Dots 24 indicate little or no overlay error.

The arrows 22 representing overlay errors can be explained asrepresenting the relative displacement between patterns (e.g. betweencorresponding portions of patterns) applied to the substrate using anun-heated patterning device and a heated patterning device respectively.Another way of interpreting FIGS. 3a and 3b is to imagine each arrow 22representing the magnitude and direction of the expansion of thepatterning device in the vicinity of that arrow 22, since this expansionleads to the magnitude and direction of the overlay errors, asrepresented by the arrows 22.

The overlay errors are not uniformly distributed over the field 18 or20, as illustrated in FIGS. 3a and 3b , where the arrows 22schematically represent measured overlay errors. Hence, the expansion ofthe patterning device is not uniformly distributed over the field 18 or20. Instead the expansion of the patterning device has a profile in thex,y-plane which has a ‘barrel-like’ shape (as can be seen from thedistribution of the overlay errors near or along the edges of the fields18 and 20). Consequently, relative to an overlay error at or near thecenters (not shown in FIGS. 3a and 3b ) of the fields 18, 20, theoverlay errors increase along the length and width of the fields 18, 20.The increase along the length of the fields 18, 20 (along the y-axis)differs from the increase across the width of the fields 18, 20 (alongthe x-axis).

The actual expansion of the patterning device may, hereinafter, also bereferred to as the distortion of the patterning device; a correspondingdistortion of the field (in the presence of ideal imaging at adirectionally uniform de-magnification) is, hereinafter, simply referredto as the distortion. The distortion of the patterning device, and thecorresponding effect on overlay errors, is not uniform, but instead hasa more complex shape. It will therefore be understood that the knownmethod of compensating for such errors by using a uniform change in themagnification of the projection system of a lithographic apparatusbefore each exposure will not accurately reflect and thereforecompensate for the distortion of the patterning device due to heating ofthe patterning device.

According to an aspect of the embodiment of the present invention, theconfiguration of (elements of) the projection system is changed, as, forexample, a scanned exposure of the substrate is undertaken. The scannedexposure of the substrate involves illuminating a slit shaped area,elongated along a first direction (e.g., the x-direction in FIGS. 1 and4), of a patterning device MA with a radiation beam PB to provide apatterned radiation beam, scanning the patterning device MA through theradiation beam in a scan direction perpendicular to the first direction(e.g. the y-direction in FIGS. 1 and 4), and synchronously scanning thesubstrate W along the scan direction. Because only a slit shaped area isilluminated, imaging the patterned radiation beam onto the targetportion of the substrate W using the projection system PL is, at anyinstant during the scanning, just limited to imaging inside a footprintof the radiation beam corresponding to the slit shaped area. The slitshaped area may for example be a rectangular area, so that the footprintat substrate level is a demagnified rectangular area. Consequently,effects on the imaging of the change of the configuration of theprojection system outside the area of the footprint can be ignored,whereas effects on the imaging within the area of the footprint can bedynamically changed to more accurately take into account changes in theexpansion of different areas of the patterning device when applying apattern to a substrate. Dynamically changing effects on imaging refersto applying an adjustment to a characteristic of the projection systemas the substrate is scanned across the footprint of the radiation beam,a magnitude of the adjustment being a function of a position of thefootprint relative to a center of the target portion or image field. Thecharacteristic of the projection system may be an imaging characteristicsuch as for example a magnification (or de-magnification) at which theprojection system provides an image of a mask pattern or an imageaberration (e.g. distortion) which the projection system provides to animage.

This means that changes in the expansion of different areas of thepatterning device can be more accurately taken into account whenapplying a pattern to a substrate. This is in stark contrast to theprior art, where the configuration of the projection system is notadjusted during the application of a pattern to the substrate, but isinstead adjusted prior to each exposure.

Referring back to FIG. 3a , the arrows 22 were described as beingrepresentative of the overlay error associated with the expansion of apatterning device. Referring now to FIGS. 4a and 4b , the distortion ofan image field (as a result of a distortion of the patterning device)has been resolved into two orthogonal components. FIG. 4a shows thecomponents of the distortion resolved in the x-direction, whereas FIG.4b shows the components of the distortion resolved in the y-direction. Afootprint of the radiation beam relative to the field 18 is shown in theform of a rectangular slit 26, also referred to hereinafter as a scanslit 26. When used in scan mode, the lithographic apparatus is arrangedto scan the slit 26 in the y-direction, as indicated by arrow 28. Asknown in the art, the patterning device and substrate may be scanned inmutually opposite directions in order to ensure that the slit 26 isscanned across the entire field 18, thus ensuring that an entire patternis projected onto and therefore applied to the substrate.

As mentioned previously, the distortion of the patterning device (or ofthe overlay error profile) has a “barrel-like” shape. The x-component 29of the distortion (as shown in FIG. 4a ) may mathematically be describedas a first order field effect. For example, the x-component of thedistortion may be described as varying linearly with the coordinate xalong a line parallel to the x-direction. The rate of change of thex-component of the distortion with respect to a change of the coordinatex is referred to as an x-magnification coefficient or simply anx-magnification. In view of the barrel shape this x-magnification is notconstant (but instead, varies) along a line parallel to the y-directionin the field 18.

The y-component 31 of the distortion (as shown in FIG. 4b ) maymathematically be described as a second-order field effect. They-component 31 of the distortion may, for example, be described asvarying quadratic with the coordinate x along a line parallel to thex-direction in the field 18. A coefficient weighting the strength ofsuch a quadratic dependence is referred to hereinafter as they-distortion coefficient. The y-distortion coefficient changes valuealong a line parallel to the y-direction in the field 18.

As discussed, FIG. 4a schematically depicts the x-component 29 of thedistortion. In order to correct for the distortion, a maximum possibledistortion occurring in the scan slit 26 needs to be taken into account.For example, one may take into account the maximum possible distortionoccurring along a centerline of the scan slit 26 parallel to the xdirection. This maximum distortion is dx_(max), and it can be seen thatthis is a function of the distance x_(e), in the x-direction across thefield 18, between an edge of the scan slit (a vertical edge in FIG. 4a )and a center of the scan slit 26 (not shown in FIG. 4a ). In view ofaforementioned first-order field effect, dx_(max) can therefore bewritten as:dx _(max) =M _(x) ·x _(e)where M_(x) is the x-magnification coefficient. It will be appreciatedthat a characteristic of the projection system PL is an imagemagnification component M_(PLx) along the direction of elongation of thescan slit 26 (the x-direction in FIGS. 4 a and b). According to anaspect of the embodiment, an adjustment to the image magnificationcomponent M_(PLx) is applied as the substrate is scanned across thefootprint of the radiation beam. For example, an adjustment with amagnitude of the adjustment being −M_(x) would result in the projectionsystem having an image magnification component M_(PLx)−M_(x) along thedirection of the scan slit 26, and application of the adjustment mayreduce or in principle correct for the maximum distortion dx_(max).

It can further be seen that the x-magnification Mx varies in they-direction as a function of the distance yc, in the y-direction acrossthe field, between a center of the scan slit and a center of the field18. According to an aspect of the embodiment, the variation in they-direction may be characterized by a second order dependence of Mx onyc (i.e. by a term including yc2). Consequently, the adjustment to theimage magnification component MPLx (with a magnitude of the adjustmentbeing −Mx) is desirably characterized by a second order dependence of Mxon yc as well. Such a second order relationship is denoted in the FIG.4a by a parabolic curve 30. It can therefore be stated that:M _(x)=(a·y _(c) ²)+(b·y _(c))+cwhere a, b and c are constants.

According to an aspect of the embodiment, the method to apply a patternto the substrate involves, besides applying dynamically an adjustment tothe image magnification component MPLx, applying a supplementaryadjustment to an image distortion component as the substrate is scannedacross the footprint of the radiation beam. It is appreciated that, dueto heating of the patterning device, there may be a distortioncharacterized by y-components 31 as schematically depicted in FIG. 4b .Further, a characteristic (i.e., an adjustable characteristic) of theprojection system is an image distortion component along the scandirection. Thus, a supplementary adjustment to the image distortioncomponent as the substrate is scanned can be used to reduce orcompensate the y-components 31 of distortion.

FIG. 4b schematically depicts y-components 31 of the distortion. It canbe seen that a distortion dy, in the y-direction (occurring in a scanslit 26) is a function of the coordinate x along, for example, a centerline (not shown in FIG. 4b ) in the scan slit 26. According to an aspectof the embodiment, this function may be characterized by a function ofsecond order in x, including a term x2. This relationship isschematically illustrated as a parabolic curve 32 in the FIG. 4b . Itcan therefore be stated that:dy=b _(yxx)·(f−x ²)where b_(yxx) is the y-distortion coefficient and f is a constant. Thecoefficient b_(yxx) is a parameter representative of the distortion inthe y-direction. The coefficient b_(yxx) is a measure of the strength ofthe (quadratic) dependence of the y-component 31 on the coordinate xalong a line parallel to the x-direction in the field 18.

The y-distortion coefficient byxx changes value along a line parallel tothe y-direction in FIG. 4b . In FIG. 4b it is schematically indicatedthat the y-distortion coefficient byxx varies as a function of thedistance yc in the y-direction. Hence, to reduce or compensate theeffect of a distortion of the patterning device having y-components 31,the magnitude of the supplementary adjustment is desirably a function ofthe position yc of the scan slit 26 (the footprint) relative to a center(not shown in FIG. 4b ) of the field 18. According to an aspect of theembodiment, the variation of byxx in the y-direction may becharacterized by a first order dependence on yc. It can therefore bestated that:b _(yxx)=(d·y _(c))+ewhere d and e are constants.

It is appreciated that, when a center of the scan slit 26 is located ata y-coordinate y_(c), the distortion dy includes an offset term f·e (notdependent on y_(c)), a term d·f·y_(c) linear in y_(c), and a termb_(yxx)·x² representing a distortion contribution:dy=f·e+d·f·y _(c) −b _(yxx) x ².

The offset term represents a uniform pattern shift which may for examplebe reduced or corrected for by an overlay correction (e.g. a shift ofthe mask MA). The term linear in y_(c) accounts for a patterning deviceexpansion, the effect of which can be reduced by applying ay-magnification change −M_(y)=−d·f to a y-magnification (or reductionfactor) M_(PLy) of the projection system. The term b_(yxx)·x² representsa y-distortion contribution which can be reduced or compensated byapplying a distortion change of +b_(yxx) to a corresponding distortionfactor b_(PLyxx) (characteristic for second order distortion in x) ofthe projection system, during scan, in accordance with the coordinatey_(c), as described above.

Mx and byxx therefore define the (dynamic) magnification and distortioncorrections desired as the scan slit 26 is scanned across the field 18in order to reduce or eliminate overlay errors. It will be appreciatedthat these corrections may change continuously as the scan slit 26 isscanned across the field 18. The adjustment of the magnification anddistortion factors can be effected by appropriate control of theprojection system, for example the projection system PL shown in FIG. 1.This is in contrast to known arrangements where such control may beundertaken prior to an exposure, but which are then kept constant duringthe exposure.

FIG. 5 is a schematic depiction of a part of a projection system PLaccording to an embodiment. The projection system PL is shown ascomprising a plurality of lenses 34. The position and/or orientation ofthese lenses 34 can be adjusted to adjust the magnification MPLx ordistortion factor bPLyxx. In principle, all the lenses are able to insome way effect the magnification MPLx. Lenses known as ‘off-axislenses’ can also be used to take into account the distortion factorbyxx. Elements of the projection system PL may therefore be adjustedduring scanning of the slit across the patterning device (in other wordsa scanned exposure of a substrate), therefore taking into account theabove-mentioned changes in magnification and/or distortion. Thecontroller CR referred to in FIG. 1 is arranged to control theconfiguration of the projection system PL (e.g. the position ororientation of one or more optical elements of the projection system PL)in order to take into account a distortion. According to an aspect ofthe embodiment, the controller CR is arranged to continuously change theconfiguration of optical elements of the projection system PL during ascanned exposure of the substrate. Alternatively, the controller may bearranged to change the configuration of optical elements in one step ora series of consecutive steps during scanning exposure. Also,continuously changing and stepwise changing can be combined duringscanning exposure. The controller CR may be a dedicated piece ofequipment, or could be arranged to also perform other tasks. Thecontroller CR could be, for example, a computer, a processor, or anembedded processor. The controller may store, be provided with or beable to retrieve information which allows it to control theconfiguration of the projection system PL (e.g. the information may beone or more mathematical definitions of the distortion).

FIGS. 6a and 6b schematically depict the magnitude and direction ofresidual overlay errors that may result from the method described above,where the configuration of the projection system is adjusted during ascanned exposure to take into account the general distortion of thepatterning device. It can be seen in FIGS. 6a and 6b that the distortion(indicated by arrows 36 and dots 38) is greatly reduced in comparisonwith the distortion where no correction of the projection system isundertaken (as shown in FIGS. 3a and 3b ). Dots 38 indicate areas wherethere is little or no distortion.

It will be appreciated that any type of optical elements may be used toimplement the above method of adjusting the configuration of aprojection system to take into account distortion of the patterningdevice. For instance, adjusting of the projection system may involveadjusting the position or orientation of one or more of the followingtypes of optical elements: refractive optical elements, reflectiveoptical elements, catadioptric optical elements, and diffractive opticalelements.

In the above described examples, the distortion has been described ashaving a “barrel-like” shape. This may often be the case. However, theexact nature of the distortion of, for example, the patterning device,will be dependent upon the pattern provided on or in the patterningdevice. For instance, FIGS. 7a to 7c depict a plurality of transmissivepatterning devices (e.g. masks) 40, 42, 44. It can be seen that eachpatterning device 40, 42, 44 is provided with opaque regions 46 whichare opaque to a radiation beam (and therefore mask out the radiationbeam) allowing a pattern to be provided onto a substrate. These opaqueregions 46 will absorb some of the energy from the radiation beam andheat up. When the opaque regions 46 heat up, they will expand causingdistortion of the patterning device 40, 42, 44 in the region ofabsorption. However, if the opaque regions 46 are not distributeduniformly across the patterning device 40, 42, 44 (which is often thecase) then the absorption of heat, and therefore the expansion of thepatterning device will not be uniform. Therefore, a “barrel-like”approximation of the distortion profile may not be particularlyaccurate. In order to establish a more accurate distortion profile, theposition of alignment marks, and the changing of these positions due todistortion of the patterning device will need to be monitored in orderto establish an accurate mathematical description of the distortion ofthe patterning device as a whole. Nevertheless, correcting for a“barrel-like” shaped distortion profile still may correct for a largeproportion of the distortion/overlay errors, regardless of the patternwith which the patterning device is provided.

In the above mentioned description, overlay errors have been describedas arising from distortion (i.e. expansion) of the patterning device. Itwill be appreciated that distortion of a pattern applied to a substrate,and subsequent overlay errors when patterns are successively applied tothe substrate, may arise from sources of distortion other than expansionof the patterning device. For instance, distortion of the substrate maycause overlay errors to arise, or distortion of the patterning devicedue to reasons other than heating may cause overlay errors to arise(e.g. bending of the patterning device). As long as the distortion ofelements of the lithographic apparatus or the substrate can be detected,the distortions can be combined in order to determine the generaldistortion for one or more elements of the lithographic apparatus,and/or the substrate, as a whole. The distortion can then bemathematically described, and the projection system can be adjustedduring an exposure in accordance with the mathematical description ofthe distortion in order to account for the distortion of one or moreelements of the lithographic apparatus, and/or the substrate, as awhole.

It will be appreciated that the distortion of, for example, thepatterning device can be obtained through measurement, simulation,experimentation, or from previous results obtained from the samepatterning device (or a similar patterning device from a same batch ofpatterning devices, for example). Measurements may be made of thepatterning device directly or indirectly, for example by measuringactual changes in the position of alignment marks on the patterningdevice, or by measuring changes in the applied or projected patternarising due to the use of the patterning device. In the case where thedistortion profile is “barrel-like” in shape, it may not be necessary todetermine the changes in position of alignment marks within an exposurefield or of the patterning device, but only the position of alignmentmarks around the field or the patterning device. This may mean thatfewer alignment marks may be necessary in order to determine the degreeof “barrel-like” distortion of the patterning device, meaning that thedistortion profile and its mathematical description can be quickly andaccurately determined, thereby reducing the effect of determining theposition of the alignment marks on the throughput of the lithographicapparatus.

In the foregoing embodiments, the configuration of the projection systemhas been described as being adjusted as the radiation beam is scannedacross or applied to the substrate. This adjustment may be arranged as acontinuous adjustment, a stepwise adjustment or a combination of thesetwo types of adjustment. For instance, a mathematical description of therequired adjustments of the projection system needed to take intoaccount distortion of, for example, the patterning device may notrequire or define any adjustment at a part of the exposure field. Forinstance, a portion of the exposure field may have no overlay errors,and therefore require no adjustment to the projection system.Alternatively, a mathematical description of the adjustments of theprojection system used to take into account distortion of, for example,the patterning device may define adjustment at all parts of the exposurefield. For instance, all portions of the exposure field may have overlayerrors, and therefore may require adjustment to the projection system toreduce or compensate for those errors.

In the foregoing embodiments, mathematical descriptions of themagnification and distortion have been given. In general, thex-magnification Mx can be a function g(yc) of the distance moved in they-direction of an order higher than second order in yc. The distortionbyxx can be a function h(yc) of the distance moved in the y-direction ofan order higher than first order in y_(c). Thus, one can write:M _(x) =g(y _(c))b _(yxx) =h(y _(c))where g(y_(c)) and h(y_(c)) can be, for example, a polynomial of degreen and m respectively, with n>2 and m>1. It will also be appreciated thatelements of the projection system may be changed to a differentconfiguration to take into account reduction or compensation ofdistortions associated with the x-magnification M_(x) or they-distortion coefficient b_(yxx). However, other or additionaldistortion effects can be taken into account. For example, thex-component 29 of the distortion (as shown in FIG. 4a ) maymathematically be described as a field-effect of an order higher thanfirst-order. Such a distortion may be present due to heating of thepatterning device, and can potentially be corrected by changing theconfiguration of the projection system. For example the configurationcan be controlled to take into account a distortion dx_(max) consistingof or including a term D3·x_(e) ³, (i.e. correct for or reduce adistortion known in lithography as “D3”, where dx=D3·x³.

In the foregoing embodiments, the radiation beam has been described asbeing scanned across the substrate. This may be achieved by moving (orscanning) the radiation beam relative to the substrate, or moving (orscanning) the substrate relative to the radiation beam.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. The description is not intended to limit theinvention.

What is claimed:
 1. A lithographic method to apply a pattern to asubstrate comprising: illuminating a slit shaped area, elongated along afirst direction, of a patterning device with a radiation beam to providea patterned radiation beam; scanning the patterning device through theradiation beam in a scan direction perpendicular to the first direction;imaging the patterned radiation beam onto a target portion of thesubstrate using a projection system, a characteristic of the projectionsystem being an image magnification component along the first direction,and an image distortion component along the scan direction;synchronously scanning the substrate along the scan direction; applyingan adjustment to the image magnification component as the substrate isscanned across a footprint of the radiation beam corresponding to theslit shaped area, the adjustment being a function of a distance in thescan direction between a center of the footprint of the radiation beamcorresponding to the slit shaped area and a center of the targetportion; and applying a supplementary adjustment to the image distortioncomponent as the substrate is scanned across the footprint of theradiation beam, the supplementary adjustment being a function of adistance in the first direction between the center of the footprint ofthe radiation beam and the center of the target portion.
 2. The methodof claim 1, wherein the adjustment is determined by combining thedistance in the first direction between the center of the footprint andthe center of the target portion and the square of the distance in thescan direction between the center of the footprint and the center of thetarget portion.
 3. The method of claim 2, wherein the supplementaryadjustment is determined by combining the distance in the scan directionbetween the center of the footprint and the center of the target portionand the square of the distance in the first direction between the centerof the footprint and the center of the target portion.
 4. The method ofclaim 1, wherein the supplementary adjustment is determined by combiningthe distance in the scan direction between the center of the footprintand the center of the target portion and the square of the distance inthe first direction between the center of the footprint and the centerof the target portion.